300W Power Adapter Solution

300W Power Adapter Solution

Wide bandgap (WBG) semiconductors are semiconductor materials with a larger band gap that allows power devices to operate at higher voltages, temperatures, and frequencies than conventional semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) are well-established and reliable WBG material choices when looking for the next generation of efficient power converter switches.

EDOM’s Technology 300W power solution incorporates SiC/GaN MOSFET and Schottky barrier diodes to reduce switching and recovery losses. Leveraging the high-power density features of WBG semiconductors, EDOM’s solution will be suitable for power supplies in industrial equipment, gaming PC’s, E-bikes, and other higher power applications. 

Our solution also uses a power factor correction (PFC) and inductor-inductor-capacitor (LLC) 2-in-1 controller with full digital control to achieve optimized efficiency with both heavy loads and light loads. Comprehensive protection features, such as maximum input voltage protection (OVP), maximum output current protection (OCP), maximum output power overload protection (OLP), and maximum operating temperature protection (OTP) also provide users with a stable and reliable power supply unit.

EDOM Technology offers a broad spectrum of power product lines, design tools and reference designs to provide total solutions for our customers, minimizing design costs and accelerating time tomarket. Contact us to learn more about our power solutions.

Solution Block Diagram


Related Products

 

The HR1211 is a multi-mode PFC and current mode LLC combo controller that is configurable via UART interface. Power-saving technology helps achieve optimized efficiency across the full operating range.

 

The MP6925 is a dual, fast turn-off, intelligent rectifier for synchronous rectification in LLC resonant converters. The MP6925 requires a minimal number of external components, and is available in an SOIC-8 package.


  •  

    SiC MOSFET - fastSiC

    fastSiC’s enhancement-mode SiC MOSFET features 10 times dielectric strength than Si MOSFET.

  •  

    Power MOSFET - ROHM RS6G120BG is a power MOSFET with low-on resistance and high power package, suitable for switching.

  •  

    N-channel MOSFET - STMicroelectronics

    STF33N60M2 is N-channel MOSFET with low on-resistance and optimized switching characteristics.

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